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北京交通大學(xué)電子科學(xué)與技術(shù)研究生導(dǎo)師介紹：張希清

導(dǎo)師信息來(lái)源：中國(guó)考研網(wǎng) 2016-05-13　相關(guān)院校：北京交通大學(xué)

基本信息

辦公電話：010-51688413 電子郵件： xqzhang@bjtu.edu.cn
通訊地址：北京交通大學(xué) 光電子技術(shù)研究所郵編：100044

教育背景與工作經(jīng)歷

1995年7月于中國(guó)科學(xué)院長(zhǎng)春光學(xué)機(jī)密機(jī)械與物理研究所獲得博士學(xué)位，1997年7月于復(fù)旦大學(xué)表面物理國(guó)家重點(diǎn)實(shí)驗(yàn)室博士后出站，1997年7月至今在北京交通大學(xué)作副教授和教授，其間先后在1998年4月—1999年4月于香港科技大學(xué)作高訪，2001年7月—2002年8月于日本北海道大學(xué)作研究員。

研究方向（順序不分先后）

發(fā)光、顯示與新能源技術(shù)
光電功能材料與器件

招生專業(yè)

光學(xué)工程碩士
電子科學(xué)與技術(shù)博士
電子科學(xué)與技術(shù)碩士

科研項(xiàng)目

國(guó)家自然科學(xué)基金“面上”：非晶態(tài)金屬氧化物透明TFT的研究，2014-01-01--2017-12-31，80.0萬(wàn)元，主持
國(guó)家自然科學(xué)基金“面上”：p型氧化物透明薄膜晶體管的研制，2013-01-01--2016-12-31，86.0萬(wàn)元，參加
科技部“973”：石墨烯的可控制備、物性與器件研究，2011-01-01--2012-12-31，263.0萬(wàn)元，參加
紅果園：國(guó)防基礎(chǔ)科研，2011-01-01--2012-12-31，275.0萬(wàn)元，參加
基本科研業(yè)務(wù)費(fèi)：聚合物光電材料和器件，2010-01-01--2012-12-31，36.0萬(wàn)元，參加
國(guó)家自然科學(xué)基金“面上”：有機(jī)/ZnMgO復(fù)合薄膜結(jié)構(gòu)新型紫外探測(cè)器的研究，2010-01-01--2012-12-31，35.0萬(wàn)元，主持
北京市自然基金“面上”：新型ZnO基合金薄膜紫外探測(cè)器的研制，2009-01-01--2011-12-31，12.0萬(wàn)元，主持
紅果園：國(guó)防預(yù)研專項(xiàng)，2008-01-01--2009-12-31，180.0萬(wàn)元，參加
�？萍蓟穑盒滦蚙nO基合金薄膜紫外(日盲)探測(cè)器的研制，2007-01-01--2009-12-31，20.0萬(wàn)元，主持
北京市科委：新型高密度光存儲(chǔ)材料的制備與應(yīng)用研究，2006-09-30--2008-12-30，60.0萬(wàn)元，參加
國(guó)家自然科學(xué)基金“重點(diǎn)”：高質(zhì)量氧化鋅單晶薄膜的界面工程和能帶工程及其光電子器件應(yīng)用，2006-01-01--2009-12-31，25.0萬(wàn)元，主持
教育部：高對(duì)比度電致發(fā)光顯示屏，2005-01-01--2007-12-31，15.0萬(wàn)元，參加
國(guó)家自然科學(xué)基金：鋅鉛鋇氧化物等薄膜及其量子阱的MBE生長(zhǎng)和特性研究，2005-01-01--2007-12-30，25.0萬(wàn)元，主持
教育部：ZnO薄膜的制備及其激光特性的研究，2003-12-12--2004-12-30，3.0萬(wàn)元，主持
教育部：新型光存儲(chǔ)材料和器件的集成，2003-05-01--2005-04-01，20.0萬(wàn)元，參加
教育部：教育部跨世紀(jì)人才基金--彩色電致發(fā)光顯示屏試制，2000-03-12--2002-10-12，30.0萬(wàn)元，參加
北京交通大學(xué)：長(zhǎng)余輝發(fā)光材料及電致發(fā)光軟屏技術(shù)的研究與開(kāi)發(fā)，2000-05-01--2005-05-01，13.0萬(wàn)元，參加
教育部：陶瓷鋁合金摩擦制動(dòng)材料及其在高速鐵路中的應(yīng)用研究，2000-01-31--2001-12-31，36.0萬(wàn)元，參加
國(guó)家自然科學(xué)基金：ZnCdSe量子點(diǎn)的分子束外來(lái)延生長(zhǎng)及激子特性研究，1997-01-01--1999-12-01，10.0萬(wàn)元，主持

教學(xué)工作

本科生：發(fā)光學(xué)

碩士：半導(dǎo)體光學(xué)性質(zhì)

博士：納米結(jié)構(gòu)與低維物理

學(xué)術(shù)成果
期刊論文

Zuofu Hu, Zhenjun Li, Lu Zhu, Fengjuan Liu, Yanwu Lv, Xiqing Zhang and Yongsheng Wang, Narrow-band ultraviolet photodetector based on MgZnO and NPB heterojunction , Optics Letters, 37（2012）3072

F. J. Liu, Z. F. Hu, L. Zhu, Z. J. Li, H. Q. Huang, J.W. 5 Zhao, X. Q. Zhang, and Y. S. Wang，Solar-Blind Photoresistors Based on Mg0.48Zn0.52O Thin Films Grown on r-Al2O3 Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy，IEEE Transactions on electron devices，59(2012)1970
Zhenjun Li, Zuofu Hu, Li Jiang, Haiqin Huang, Fengjuan Liu, Xiqing Zhang, Yongsheng Wang, Penggang Yin , Lin Guo, Nanoporous ZnO film grown on sapphire by chemical vapor deposition, Materials Letters 79 (2012) 209–211
F.J. Liu, Z.F. Hu, J. Sun, Z.J. Li, H.Q. Huang, J.W. Zhao, X.Q. Zhang, Y.S. Wang，Ultraviolet photoresistors based on ZnO thin films grown by P-MBE, Solid-State Electronics,68 (2012)90
Jian-Wei Zhao, Jian Sun, Hai-Qin Huang, Feng-Juan Liu, Zuo-Fu Hu, Xi-Qing Zhang，Effects of ZnO buffer layer on GZO RRAM devices, Applied Surface Science, 258(2012)4588
Zhenjun Li, Zuofu Hu, Fengjuan Liu, Haiqin Hang, Xiqing Zhang，Yongsheng Wang, Lateral growth and optical properties of ZnO microcrystal on sapphire substrate, Optical materials, 34(2012)1908
Zhenjun Li, Zuofu Hu, Li Jiang, Haiqin Huang, Fengjuan Liu, Xiqing Zhang, Yongsheng Wang, Synthesis and optical properties of three-dimensional nanowall ZnO film prepared by atmospheric pressure chemical vapor deposition, Applied Surface Science,258 (2012)10175-10179
Zhao Jian-Wei, Liu Feng-Juan, Huang Hai-Qin, Hu Zuo-Fu, and Zhang Xi-Qing，Effects of substrate temperature on ZnO-based resistive random access memory devices, Chinese Physics B，21（2012）065201

DAI Qian, ZHU Lu, SUN Jian, ZHANG XiQing & WANG YongSheng，Organic photodetectors based on transparent electrodes for application in ultraviolet light detection，Science China, 55(2012)1551

Jianwei Zhao , Fengjuan Liu, Jian Sun,Haiqin Huang, Zuofu Hu , and Xiqing Zhang*，Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices, Chin. Optics Lett., 10 (2012) 013102
L. Zhu,W. Sh. Wang, Zh. G. Yao, X. Q. Zhang, and Y. S. Wang , Ultraviolet Photodetectors With Narrow-Band Spectral Response Using TAPC Donor, IEEE Transactions on Electron Devices，59(2012) 3583
Lu Zhu, Qian Dai, Zuo-fu Hu, Xi-qing Zhang, and Yong-sheng Wang, High response organic deep ultraviolet photodetector with PEDOT:PSS anode, Optics Letters, 36(2011) 1821
Lu Zhu, Qian Dai, Zuo-fu Hu, Xi-qing Zhang, and Yong-sheng Wang， Organic Deep Ultraviolet Photodetector With Response Peak Focusing on 270 nm Using the Acceptor BAlq, IEEE Photonics Technology Lett., 23（2011）1835
Zhenjun Li, Zuofu Hu, Fengjuan Liu, Jian Sun, Haiqin Huang, Xiqing Zhang, Yongsheng Wang, High quality hexangular ZnO crystals grown by chemical vapor deposition，Materials Letters, 65 (2011) 809
H.Q. Huang, F.J. Liu, J. Sun, J.W. Zhao, Z.F. Hu, Z.J. Li, X.Q. Zhang, Y.S. Wang, Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy, Applied Surface Science, 257 (2011) 10721
Fengjuan Liu, Rui Zhang, Zuofu Hu, Jian Sun, Haiqin Huang, Zhenjun Li, Jianwei Zhao, Penggang Yin, Lin Guo, Xiqing Zhang, and Yongsheng Wang, Structural and optical properties of non-polar (11-20) ZnO films grown by plasma-assisted molecular-beam epitaxy, IEEE Transactions on Plasma Science, 39(2011)700
HUANG Hai-Qin, LIU Feng-Juan, SUN Jian, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing*, Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering, Journal of Physics and Chemistry of Solids, 72 (2011) 1393
SUN Jian, DAI Qian, LIU FengJuan, HUANG HaiQin, LI ZhenJun, ZHANG XiQing* & WANG YongSheng, Ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response，Science China（Physics, Mechanics & Astronomy）, 54（2011）102
HUANG Hai-Qin, SUN Jian, LIU Feng-Juan, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing, WANG Yong-Sheng, Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering, Chin. Phys. Lett. 28 (2011) 128502
Jian Sun, Kuanjun Peng, Lu Zhu, Zuofu Hu, Qian Dai, Xiqing Zhang, and Yongsheng Wang, Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD, Chin. Optics Lett., 9(2011) 052501
Q. Dai and X. Q. Zhang, High-response ultraviolet photodetector based on NPB and PBD, Optics Express, 18（2010）11821
Jian Sun, Feng-Juan Liu, Hai-Qin Huang, Jian-Wei Zhao, Zuo-Fu Hu, Xi-Qing Zhang, Yong-Sheng Wang, Fast response ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by radio-frequency magnetron sputtering, Applied Surface Science, 257 (2010) 921–924
X.Q. Zhang Ikuo Suemune, H. Kumano, Z.G. Yao, S.H. Huang, Room temperature ultraviolet lasing action in high-quality ZnO thin films, J. Lumin., 122-123（2007）828
Z.G. Yao, X.Q. Zhang, Ikuo. Suemune, S.H. Huang, Room-temperature stimulated emission from ZnO thin films grown by radio-frequency magnetron sputtering, J. Lumin., 122-123（2007）825
X. Q. Zhang, Z. G. Yao, and S. H. Huang, Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates, J. Appl. Phys. 99 (2006) 063709
Peng Du, Xiqing Zhang, Xuebai Sun, and Yongsheng Wang，n-type ZnS used as electron transport material in organic light-emitting diodes,Chin. Phys. 15(2006)1370
Yao Zhi-Gang, Zhang Xi-Qing, Shang Hong-Kai et al, Lasing action of ZnO thin film grown by radio-frequency magnetron sputtering, Chin. Phys., 14(2005)1205
D.D. Wang, Y.S. Wang, X.Q. Zhang, Z.Q. He, L.X. Yi, L.E. Deng, C.X. Zhang, X. Han, Enlargement of complete two-dimensional band gap by using photonic crystal heterostructure, Appl. Phys. B, 340(2005)1882
W.Q. Peng, S.C. Qu, G.W. Cong, X.Q. Zhang, Z.G. Wang, Optical and magnetic properties of ZnS nanoparticles doped with Mn2+, Journal of Crystal Growth 282 (2005) 179–185
D. P. Xiong，X. Q. Zhang et al, Optical properties of ZnO thin films deposited by rf sputtering on SiO2 substractes. Chin Opt. Lett 2 (2004)179
X. Q. Zhang, Ikuo Suemune et al, Surface-emitting stimulated emission in high-quality ZnO thin films, J. Appl. Phys., 96(2004) 3733
X. Q. Zhang, ZK Tang et al, Second harmonic generation in self-assembled ZnO microcrystallite thin films, Thin Solid Films 250 (2004)320
X. Q. Zhang, Z. K. Tang, A. Ohtomo, and H. Koinuma,Optical gain in second harmonic generation in self assembled ZnO microcrystannite thin films J. Crystal Growth 259(2003) 286
X. Q. Zhang, Z. K. Tang et al, Resonant exciton Second harmonic generation in self assembled ZnO microcrystannite thin films J. of Phys.: Condens. Matter 15(2003) 5191
X. Q. Zhang, S. Ganapathy, I. Suemune et al, Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers, Appl. Phys. Lett. 83(2003) 4524.
Sasikala Ganapathy, X. Q. Zhang, Ikuo Suemune et al, GaNAs as Strain Compensating Layer for 1.55_m Light Emission from InAs Quantum Dots, Jpn. J. Appl. Phys. 42 (2003) 5598.
X. Q. Zhang, Sasikala Ganapathy, Ikuo Suemune et al, Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy, J. Appl. Phys. 92(2002) 6813.