北京航空航天大學(xué)物理科學(xué)與核能工程學(xué)院凝聚態(tài)物理導(dǎo)師介紹：許懷哲

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導(dǎo)師詳細(xì)信息

姓名：許懷哲

性別：男

出生年份：1963

職稱：教授

院系：物理科學(xué)與核能工程學(xué)院

首次聘任導(dǎo)師時(shí)間：2006

現(xiàn)聘任導(dǎo)師一級(jí)學(xué)科名稱：物理學(xué)

現(xiàn)聘任導(dǎo)師二級(jí)學(xué)科名稱：凝聚態(tài)物理

聘任在第二學(xué)科培養(yǎng)博士生專業(yè)名稱：無(wú)

聘任在自主設(shè)置學(xué)科培養(yǎng)博士生專業(yè)名稱：無(wú)

主要研究方向及特色：1.稀磁性半導(dǎo)體材料、半導(dǎo)體自旋電子學(xué)、電子自旋量子霍爾效應(yīng)2.低維半導(dǎo)體結(jié)構(gòu)材料制備、低維半導(dǎo)體光學(xué)量子效應(yīng)和電子量子輸運(yùn)研究3.氧化物基光催化和超導(dǎo)材料電子結(jié)構(gòu)特性第一原理計(jì)算4.鋰離子電池電極材料物理探索5.第一壁材料核輻照效應(yīng)實(shí)驗(yàn)與理論分析7.

電子信箱：hzxu@buaa.edu.cn

辦公電話：010-82337935

辦公地點(diǎn)：教學(xué)區(qū)主樓330

通信地址：北京市海淀區(qū)學(xué)院路37號(hào)

個(gè)人簡(jiǎn)介：

個(gè)人情況簡(jiǎn)介：

許懷哲教授，博導(dǎo)。蘭州大學(xué)物理系1984年本科畢業(yè)，1990年碩士畢業(yè)，1995年凝聚態(tài)物理專業(yè)博士畢業(yè)，獲理學(xué)博士學(xué)位。1997年6月中國(guó)科學(xué)技術(shù)大學(xué)研究生院（北京）博士后出站，1997-2000年任中國(guó)科學(xué)院半導(dǎo)體研究所，半導(dǎo)體材料科學(xué)重點(diǎn)實(shí)驗(yàn)室副研究員和課題組副組長(zhǎng)。1999年元月到2003年4月間，先后在英國(guó)諾丁漢大學(xué)（Nottingham University)物理與天文系（Research Staff,公派），日本筑波大學(xué)(Tsukuba University)物理工學(xué)系（助手，Assistant Professor），美國(guó)俄克拉荷馬大學(xué)(Oklahoma University)電機(jī)系（Research Associate）等，從事半導(dǎo)體低維材料和紅外激光器的分子束外延生長(zhǎng)研究，在國(guó)際上最早實(shí)現(xiàn)了InGaAs量子點(diǎn)在GaAs(3110)B襯底上的二維有序生長(zhǎng)。從2003年5月起到2006年5月間，在日本國(guó)東北大學(xué)(Tohoku University)，電氣通訊研究所(RIEC)，“鐵磁半導(dǎo)體之父”---大野英男(Hideo Ohno)教授研究室，任職產(chǎn)學(xué)官連攜研究員(Research Fellow)，參加了日本文部科學(xué)省RR2002 IT Program：“高性能，超低消耗電力存儲(chǔ)器的開發(fā)”項(xiàng)目。已經(jīng)發(fā)表論文116篇（第一作者49篇），其中SCI收錄英文論文87篇（第一作者48篇，APL--6篇,Phys.Rev.B--2篇，J.Appl.Phys.--7篇），被引用500余次。2001和2002年分別發(fā)表的在美《Appl . Phys . Lett》上有關(guān)自旋電子學(xué)器件的論文已成為該領(lǐng)域研究必引的論文（已被他引96次和46次）。作為參加者和主要參加者,曾先后獲得國(guó)家自然科學(xué)二等獎(jiǎng)（2001年,排名第11），中國(guó)科學(xué)院自然科學(xué)一等獎(jiǎng)（2000年，排名第11）和甘肅省省級(jí)科技進(jìn)步一等獎(jiǎng)（1995，排名第5）和二等獎(jiǎng)（1996，排名第5）各一項(xiàng)。2006年6月辭職回國(guó)，任北京航空航天大學(xué)凝聚態(tài)物理教授，博士生導(dǎo)師，物理科學(xué)與核能工程學(xué)院研究生教學(xué)副院長(zhǎng)。兼職上海交通大學(xué)教育部“微納技術(shù)”實(shí)驗(yàn)室客座教授；教育部“微納測(cè)控與低維物理”實(shí)驗(yàn)室教授。目前主要從事有關(guān)稀磁性半導(dǎo)體材料中的自旋相關(guān)特性，低維半導(dǎo)體結(jié)構(gòu)中的量子自旋電子輸運(yùn)，石墨烯能帶調(diào)控和載流子相對(duì)論輸運(yùn)特性研究。

教學(xué)及人才培養(yǎng)情況：

現(xiàn)講授博士，碩士研究生《薄膜表面與界面物理》，《凝聚態(tài)物理綜合課》，本科生《電動(dòng)力學(xué)》課程。現(xiàn)有再讀博士研究生4名，碩士研究生1名，畢業(yè)碩士研究生1名。擬每年招收1-2名博士生和1-2名碩士生。目前承擔(dān)國(guó)家“973”重點(diǎn)項(xiàng)目子課題“高容量、長(zhǎng)壽命納米負(fù)極儲(chǔ)鋰材料制備及應(yīng)用基礎(chǔ)研究”100萬(wàn)元，歡迎有志從事低維半導(dǎo)體結(jié)構(gòu)量子特性，半導(dǎo)體自旋電子學(xué)和鋰離子電池材料物理研究的同學(xué)報(bào)考。

畢業(yè)博士生：程巖，長(zhǎng)春應(yīng)用化學(xué)研究所博士后。

林鑫，航天材料及工藝研究所，北京市豐臺(tái)區(qū)東高地。

鄧紅艷，清華大學(xué)物理系博士后。

王立英,北航材料學(xué)院博士后（2015年6月畢業(yè)）

陳健，中科院半導(dǎo)體研究所超晶格國(guó)家重點(diǎn)實(shí)驗(yàn)室博士后（2015年6月畢業(yè)）

畢業(yè)碩士生：崔正南，億利資源集團(tuán)技術(shù)中心，北京市西城區(qū)。

陳健，轉(zhuǎn)為博士生

石曉玄，csc資助去法國(guó)讀博士

林鑫，轉(zhuǎn)為博士生

馬姚，恒寶股份有限公司（北京）科技公司。

王姊程，轉(zhuǎn)為博士生

建志旭，轉(zhuǎn)為（材料與物理學(xué)科交叉）博士生。

在讀博士生：侯振華，徐建勛，王姊程

在讀碩士生：周蘭青

發(fā)表學(xué)術(shù)論文：

96. J. Chen, Huaizhe Xu, Y. P. Zhang, “Anisotropic intervalley plasmon excitations in graphene”, Commn. Thero. Phys. xx,xxxx(2015).

95. S. B. Wang, Y. L. Xing, C. L. Xiao, X. Wei, Huaizhe Xu and S. C. Zhang , “Hollow carbon-shell/carbon-nanorod s for high performance Li-ion batteries and supercapacitors”, RSC Adv., 5,7959-7963(2015)

94. S. B. Wang, C. L. Xiao, Y. L. Xing, Huaizhe Xu and S. C. Zhang, “Carbon nanofibers/nanosheets hybrid derived from cornstalks as a sustainable anode for Li-ion batteries”, J. Mater. Chem. A, 2015, Advance Article , DOI: 10.1039/C5TA00050E, Communication

93. Jianxun Xu, Yimin Cui, Huaizhe Xu, “Improvements of dielectric properties of Fe doped TbMnO3”, Ceramics International 40, 12193–12198(2014).

92. Shengbin Wang, Yalan Xing, Huaizhe Xu, and Shichao Zhang, “MnO Nanoparticles Interdispersed in 3D Porous Carbon Framework for High Performance Lithium-Ion Batteries” ACS APPL. MATER. INTERFACES, 6, 12713−12718 (2014).

91. L.Y. Wang, Huaizhe Xu, H. L. Wang and H. Pan, Y. P. Zhang, G. L.Zhang “Conductance spin-polarization filter in monolayer graphene with combined magneto-electric modulation”, Physic E61, 185-190(2014).

90. Huaizhe Xu, L.Y. Wang, Q. Q. Yan, S. C. Zhang, “Spin filtering magnetic modulation and spin-polarization switching in hybrid ferromagnet/semiconductor structures”，Sci China-Phys Mech Astron,57(6): 1057-1062(2014) .

89. Y. Cheng, R. Chen, H. F.Feng, W. C. Hao, Huaizhe Xu, Y. Wang, J. Li, “Variation of coordination environment and its effect on white light emission property in Mn-doped ZnO/ZnS complex structure”, Physical Chemistry Chemical Physics, 16, 4544 (2014)

88. J. Chen, Huaizhe Xu, “Directional plasmon filtering in a two-dimensional electron gas embedded in high-index crystallographic planes”, Chin. Phys.Lett., 31, 037301(2014).

87. Huaizhe Xu, L.Y.Wang, H.L.Wang, and S.C.Zhang; “Magnetic control spin-polarization reversal in a hybrid ferromagnet/semiconductor spin filter”, J. Magnetism and Magnetic Materials, 351, 87 (2014).

86. Y. Cheng, W. C. Hao, W. X. Li, Huaizhe Xu, R. Chen, and S. X. Dou, “Variation of Mn dopant distribution states and its effect on magnetic coupling mechanism with x in Zn1-xMnxO nanocrystals” Chin. Phys. B22,107501 (2013).

85. X. Lin, H. L. Wang, H. Pan, Huaizhe Xu, “The Unconventional Transport Properties of Dirac Fermions in Graphyne”, Chin. Phys. Lett. 30, 077305 (2013).

84. Y. Cheng, W. C. Hao, Huaizhe Xu, Y. X. Yu, T. M. Wang, R. Chen, L.J. Zhang,Y. Du, X. L. Wang, and S. X. Dou, “Improving the Solubility of Mn and Suppressing the Oxygen Vacancy Density in Zn0.98Mn0.02O Nanocrystals via Octylamine Treatment” ACS APPLIED MATERIALS & INTERFACES, 4, 4470-4475 (2012).

83. H. Y. Deng, W. C. Hao, Huaizhe Xu, and C. Z Wang, “Effect of Intrinsic Oxygen Vacancy on the Electronic Structure of γ-Bi2O3: First-Principles Calculations”, The Journal of Physical Chemistry C116, 1251–1255 (2012).

82. X. Lin, H. L. Wang, H. Pan, Huaizhe Xu, “Gap opening of single-layer graphene with periodical scalar and vector potentials”, Phys. Lett. A376 (2012), pp. 584-589 .

81. C. Fan，J. L.Wang, N. Tang, H. X. Xu, G. K. Wei, Huaizhe Xu, “Fabrication and PL of Er3+-doped Al2O3 thin films with Sol-Gel method” J. Nanosci. Nanotechnol. 11, 11147-11150 (2011).

80. W. C. Hao, M. Sun, Huaizhe Xu, T. M. Wang, “Al Doped ZnO Nanogranular Film Fabricated by LBL Method and Its Application for Gas Sensors”, J. Nanosci. Nanotechnol. 11, 10649-10653 (2011). Also INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 頁(yè): 1173-1174 出版年: 2010

79. Q. Q. Yan, J. Chen, H. Pan, Huaizhe Xu, “Resonant tunneling in double-barrier structures under transverse magnetic field”, Physica B 406，4361-43650(2011).

78. J. Shang, W. Zou, W. C. Hao, X. Xin, Huaizhe Xu, T. M. Wang, “Visible-light photocatalytic properties of γ-Bi2O3 composited with Fe2O3”, Rare Metals 30, (Special Issue), 140(2011).

77. H. Y. Deng, W. C. Hao, Huaizhe Xu, “First-principles calculations of novel sillenite compounds Bi24M2O40 (M=Se or Te)”, Rare Metals 30, (Special Issue), 135 (2011).

76. H. Y. Deng, W. C. Hao, Huaizhe Xu, “A Transition Phase in the Transformation from α-, β- and ε- to δ-Bismuth Oxide”, Chin. Phys. Lett. 28, 056101 (2011).

75. W. C. Hao, J. J. Li, Huaizhe Xu, J. O. Wang, T. M. Wang, “Enhancement of magnetism of Zn0.95Co0.05O films by p-type Cu+ doping”, PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, 21, 31-35 (2011).

74. X. Lin, H. L. Wang, H. Pan, Huaizhe Xu, “Gap opening and tuning in single-layer graphene with combined electric and magnetic fields modulation”, Chinese Phys. B20，047302(2011）

73. H. Pan, Huaizhe Xu, R. Lv, “Quantum pump in an Aharonov-Bohm interferometer with a quantum dot driven by an ac field”. Euro Phys. J. B78, 475-479, (2010).

72. H. Pan, Huaizhe Xu, R. Lv, “Charge and spin pumping effects in a single-dot Aharonov-Bohm ring with ferromagnetic leads”, Physica E43, 85-88 (2010).

71. X. Lin, H. Pan, Huaizhe Xu， “Magnetic manipulation of massless Dirac fermions in graphene quantum dot”, Commn. Thero. Phys. 54(6), 1134(2010).

70. W. C. Hao, J. J. Li, Huaizhe Xu, J. O. Wang, T. M. Wang, "Effects of Annealing Atmospheres on the Ferromagnetic Ordering of Zn0.95Co0.05O Nanocrystals with Surface-Preferential Co Distribution", ACS APPLIED MATERIALS & INTERFACES, 2(7), 2053-2059 (2010).

69. J.J. Li, W.C. Hao, Huaizhe Xu, T.M. Wang, and J.Shi,“Enhancement of ferromagnetism in Zn0.95Co0.05O films by lithium codoping ”, J. Appl. Phys. 106, 063915(2009).

68. J.J. Li, W.C. Hao, Huaizhe Xu and T.M. Wang,“Variation of Structural and Magnetic Properties with Co Doping in Zn1-xCoxO Nanocrystals”, J. Appl. Phys. 105, 053907(2009).

67. H.F. Qi, W.C. Hao, Huaizhe Xu, J.Y. Zhang, and T.M. Wang,“Synthesis of large-size monodisperse polystyrene microspheres by dispersion polymerization with dropwise monomer feeding procedure”, Colloid Polym Sci. 287, 243(2009).

66. M.Sun, Y.Du, W.C. Hao, Huaizhe Xu, Y.X. Yu, and T.M. Wang,“Fabrication and Wettability of ZnO nanorod ”, J. Mater. Sci. Technol. 25, 53(2009).

65. Huaizhe Xu, Q.Q. Yan,“Electrical tunable of electron spin polarization in hybrid magnetic–electric barrier structures”, Phys. Lett. A, 372，6216(2008).

64.Huaizhe Xu,“Correlations between electronic energy band spin splitting and magnetic profile symmetry of magnetic superlattice”, Physica E40, 2959(2008).

63. S. Ghosh, D.W. Steuerman, B. Maertz, and D.D. Awschalom, K. Ohtani, Huaizhe Xu, and H. Ohno,“Electrical control of spin coherence in ZnO”, Appl. Phys. Lett., 92, 162109 (2008).

62. L. Hao, X.G. Diao, Huaizhe Xu, B. X. Gu, T. M. Wang,“Thickness dependence of structural, electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates”，,Appl. Surf. Sci, 254, 3504-3508 (2008).

61. J. Ma, W.C. Hao, R.Y. Luo and Huaizhe Xu,“Effect of crystallization quality on ferromagnetism in Zn1 − xCoxO nanopowders”，Materials Letters, 62, 403–406 (2008).

60. Huaizhe Xu, Q.Q. Yan and T.M Wang; “Effect of interaction between periodic -doping in both well and barrier layers on modulation of superlattice band structure”, Phys. Lett. A, 368，324 (2007).

59. Huaizhe Xu, K. Ohtani, M. Yamao, and H. Ohno, “Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy”, Appl. Phys. Lett. 89, 071918(2006).

58. Hongmei Wang, Huaizhe Xu, Yafei Zhang, “A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes”, Phys. Lett. A 355, 481-488 (2006).

57. Huaizhe Xu, Keita Ohtani, Miyuki Yamao, Hideo Ohno, “Control of ZnO (000)/Al2O3 (110) surface morphologies using plasma-assisted molecular beam epitaxy”, Phys. Stat. Sol. (b) 243, 773-777(2006).

56. Hongmei Wang, Huaizhe Xu and Yafei Zhang, “Indispensable factors influence the quasi-bound levels of biased multi-barrier quantum well structures” Phys. Lett. A 340, 347-354 (2005).

55. Huaizhe Xu and Z. Shi, “Comment on "Effects of the localized state inside the barrier on resonant tunneling in double-barrier quantum wells"”, Phys. Rev. B 69, 237201 (2004).

54. Huaizhe Xu and Yafei Zhang, “Spin-filter devices based on resonant tunneling antisymmetrical magnetic/semiconductor hybrid structures”, Appl. Phys. Lett. 84, 1955 (2004)

53. A. Majumdar, Huaizhe Xu, F. Zhao, J. C. Keay, L. Jayasinghe, S. Khosravani, X. Lu, V. Kelkar, and Z. Shi, “Bandgap energies and refractive indices of Pb1–xSrxSe”, J. Appl. Phys. 95, 939 (2004).

52. Huaizhe Xu, Pijun Liu and Yafei Zhang, “Spin polarization of phase delay time in a magnetic-electric barrier structure”, Phys. Stat. Sol. (b) 240, 169-175 (2003).

51. Huaizhe Xu, F. Zhao, A. Majumdar, L. Jayasinghe, and Z. Shi, “High power mid-infrared optically pumped PbSe/PbSrSe multiple-quantum-well vertical-cavity surface-emitting laser operation at 325K”, Electron. Lett. 39, 659 (2003).

50. A. Majumdar, Huaizhe Xu, S. Khosravani, F. Zhao, L. Jayasinghe, and Z. Shi, “High power light emission of IV–VI lead salt multiple-quantum-well structure grown by molecular-beam epitaxy on <111> BaF2 substrate”, Appl. Phys. Lett. 82, 493 (2003).

49. Huaizhe Xu and Z. Shi, “Strong wave-vector filtering and nearly 100% spin polarization through resonant tunneling antisymmetrical magnetic structure”, Appl. Phys. Lett. 81, 691 (2002).

48. Huaizhe Xu, Pijun Liu, Jiansheng Wu and Yafei Zhang, “Resonance quasi-levels of coupling between transverse and longitudinal wave through symmetrical double-barrier structures”, Phys. Lett. A 303, 25-29 (2002).

47. Huaizhe Xu, K. Akahane, H. Z. Song, Y. Okada and M. Kawabe, “Effect of buffer composition on lateral alignment of self-assembled In0.4Ga0.6As island s grown on GaAs (3 1 1)B substrates”, J. Crystal Growth, 237-239,1307-1311(2002).

46. Huaizhe Xu, K. Akahane, H. Z. Song, Y. Okada and M. Kawabe, “Distinctly different two-dimensional ordering alignments of InGaAs island s on GaAs(3 1 1)B and AlGaAs(3 1 1)B surfaces”, J.Crystal Growth, 234, 509-515 (2002).

45 .H.Z. Song, Y. Okada, K. Akahane, Huaizhe XU, and M. Kawabe, "Negative differential conductance of In0.4Ga0.6As/GaAs (311)B lateral coupled quantum dot", INSTITUTE OF PHYSICS CONFERENCE SERIES (170): 381-386 2002 .

44. Huaizhe Xu and Y. Okada, “Analytical calculation of the resonant quasi-level lifetime in double-barrier quantum structures”, Physica B 305, 113-120 (2001).

43. Huaizhe Xu and Y. Okada, “Does a magnetic barrier or a magnetic-electric barrier structure possess any spin polarization and spin filtering under zero bias?”, Appl. Phys. Lett. 79, 3119 (2001).

42. Weihong Jiang, Huaizhe Xu, Bo Xu, Wei Zhou, Qian Gong, Ding Ding, Jiben Liang, and Zhanguo Wang, “Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy”, J. Vac. Sci. Technol. B 19, 197 (2001)

41. Huaizhe Xu, K. Akahane, H. Z. Song, Y. Okada and M. Kawabe, “Spatial alignment evolution of self-assembled In0.4Ga0.6As island s grown on GaAs (311)B surface by atomic hydrogen-assisted molecular beam epitaxy”, Appl.Surf.Sci., 185, 92-98 (2001).

40. Huaizhe Xu, K. Akahane, H. Z. Song, Y. Okada and M. Kawabe, “Two-dimensional ordering s of InAsxP1−x islands formed by As/P exchange reaction on InP (3 1 1)B surface”, J.Crystal Growth, 233, 639-644 (2001).

39. Huaizhe Xu, K. Akahane, H. Z. Song, Y. Okada and M. Kawabe, “Strikingly well-defined two-dimensional ordered s of In0.4Ga0.6As quantum dots grown on GaAs (3 1 1)B surface”, J. Crystal Growth, 223, 104-110 (2001).

38. Huaizhe Xu, A. Bell, Z. G. Wang, Y. Okada, M. Kawabe, I. Harrison and C. T. Foxon, “Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate”, J. Crystal Growth, 222, 96-103 (2001).

37. Huaizhe Xu, K. Takahashi, C. X. Wang, Z. G. Wang, Y. Okada, M. Kawabe, I. Harrison and C. T. Foxon, “Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE”, J. Crystal Growth, 222, 110-117 (2001).

36. R. Xia, Huaizh Xu, I. Harrison, B. Beaument, A. Andrianov, S. R. A. Dods, J. M. Morgan and E. C. Larkins, “Spectrally resolved electroluminescence microscopy and μ-electroluminescence investigation of GaN-based LEDs”, J. Crystal Growth, 230, 467-472 (2001).

35. K. Akahane, Huaizhe Xu, Y. Okada and M. Kawabe, “Formation of lateral-two-dimensional ordering in self-assembled InGaAs quantum dot on high index substrates”, Physica E11, 94-98 (2001).

34. H. Z. Song, K. Akahane, S. Lan, Huaizhe Xu, Y. Okada, and M. Kawabe, “In-plane photocurrent of self-assembled InxGa1–xAs/GaAs(311)B quantum dot s”, Phys. Rev. B 64, 085303 (2001).

33. H. Z. Song, Y. Okada, K. Akahane, S. Lan, Huaizhe Xu and M. Kawabe, “Metal–insulator transition in an In0.4Ga0.6As/GaAs(311)B quantum dot superlattice”, Phys. Lett. A284, 130-135 (2001).

32. Huaizhe Xu, Z. G. Wang, M. Kawabe, I. Harrison, B. J. Ansell and C. T. Foxon, “Fabrication and characterization of metal–semiconductor–metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE”, J. Crystal Growth, 218,1-6 (2000).

31. Huaizhe Xu, Z. G. Wang, I. Harrison, A. Bell, B. J. Ansell, A. J. Winser, T. S. Cheng, C. T. Foxon and M. Kawabe, “Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy”, J. Crystal Growth, 217,228-232 (2000).

30. W.H. Jiang, X. L. Ye, B. Xu, Huaizhe Xu, D. Ding, J. B. Liang, and Z. G. Wang “Anomalous temperature dependence of photoluminescence from InAs quantum dots”, J. Appl. Phys. 88, 2529 (2000).

29. Weihong Jiang, Huaizhe Xu, Bo Xu, Xiaoling Ye, Wei Zhou, Ding Ding, Jiben Liang and Zhanguo Wang, “Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy”, Physica E8, 134-140 (2000).

28. W. H. Jiang, Huaizhe Xu, B. Xu, X. L. Ye, J. Wu, D. Ding, J. B. Liang and Z. G. Wang, “Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy”, J. Crystal Growth, 212, 365-359 (2000).

27. Wei Zhou, Bo Xu, Huaizhe Xu, Weihong Jiang, Fengqi Liu, Qian Gong, Ding Ding, Jiben Liang, Zhanguo Wang, Zuoming Zhu and Guohua Li, “Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces” J. Vac. Sci. Technol. B 18, 21 (2000).

26. Sun Zhong-zhe, Wu Ju, Liu Feng-qi, Xu Huaizhe, Chen Yong-hai, Ye Xiao-ling, Jiang Wei-hong, Xu Bo, and Wang Zhan-guo, “Structural and photoluminescence properties of In0.9(Ga/Al)0.1As self-assembled quantum dots on InP substrate”, J. Appl. Phys. 88, 533 (2000).

25. Huaizhe Xu, Weihong Jiang, Bo Xu, Wei Zhou and Zhanguo Wang, “Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces”, J. Crystal Growth, 206, 279-286 (1999).

24. Huaizhe Xu, Weihong Jiang, Bo Xu, Wei Zhou and Zhanguo Wang, “Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(3 1 1)B surfaces”, J. Crystal Growth, 205, 481-488 (1999).

23. Huaizhe Xu, Qian Gong, Bo Xu, Weihong Jiang, Jizheng Wang, Wei Zhou and Zhanguo Wang, “Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates”, J. Crystal Growth, 200, 70-76 (1999).

22. Huaizhe Xu, Wei Zhou, Bo Xu, Weihong Jiang, Qian Gong, Ding Ding and Zhanguo Wang, “In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates”, Appl. Surf. Sci. 141, 101-106 (1999).

21. Huaizhe XU, et al. "Lateral ordered InGaAs self-organized quantum dots grown on (311) GaAs by conventional molecular beam epitaxy", Chin. Phys. Lett. 16, 68 (1999).

20. W. H. Jiang, Huaizhe Xu, B. Xu, J. Wu, X. L. Ye, H. Y. Liu, W. Zhou, Z. Z. Sun, Y. F. Li, J. B. Liang and Z. G. Wang, “Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(1 0 0) and high index substrates by molecular beam epitaxy”, J. Crystal Growth, 205, 607-612 (1999).

19. W. Jiang, Huaizhe XU, et al. "Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by MBE", J. Mater. Sci. Technol., 15, 523 (1999).

18. W. Zhou, Z. M. Zhu, F. Q. Liu, B. Xu, Huaizhe Xu and Z. G. Wang, “Substrate surface atomic structure influence on the growth of InAlAs quantum dots”, J. Crystal Growth, 200, 608-612 (1999).

17. W. Zhou, B.Xu, Huaizhe XU, et al. "PL study on coarsening of self-assembled InAlAs quantum dots on GaAs(001) ", J. Electronic Materials 28, 528 (1999).

16. W. Zhou, B.Xu, Huaizhe XU, et al. "Red luminescence from self-assembled InAlAs/AlGaAs quantum dots with bimodal size distribution", Chin. Phys. Lett. 16, 298 (1999).

15. Yinyue Wang and Huaizhe Xu, “Interface vibrational spectrum investigation on reactively-sputtered a-Si:H/a-Ge:H multilayer films”, Thin Solid Films, 299, 10-13 (1997).

14. Huaizhe Xu, Meifang Zhu and Boyuan Hou, “Analytical expressions for resonant-tunneling lifetime in symmetrical double-barrier structures”, Phys. Lett. A 223, 227-231 (1996).

13. P. Chen, Huaizhe XU, et al., Green photoluminescence from nc-Ge particles, on “Liquid Crystal and Display”, Proc.SPIE. Vol. 2892, 158 (1996).

12. Huaizhe Xu and Guanghua Chen, “Effects of an impurity sheet in the well on resonant tunneling in double-barrier structures”, J. Appl. Phys. 77, 5478 (1995).

11. Huaizhe Xu, Guanghua Chen, “Effects of the δ-Doping Position in the Well on Resonant Tunneling in Double-Barrier Structures”, Phys. Stat. Sol. (b ) 191, K17-K22 (1995).

10. Huaizhe Xu, Guanghua Chen, “Effects of Scattering on Resonant Tunneling in Double-Barrier Structures”, Phys. Stat. Sol. (b) 187, K37-K41 (1995).

9. Huaizhe Xu, Yinyue Wang, Guanghua Chen, “Structural changes of progressively annealed a-Si: H/a-Ge: H multilayers”, Phys. Stat. Sol. (a) 143, K87-K90 (1994).

8. Huaizhe Xu, Guanghua Chen, “Resonant-Tunneling Lifetime in Symmetrical Double-Barrier and δ-Doped Barrier Heterostructures”, Phys. Stat. Sol. (b) 185, K69-K73 (1994).

7. Huaizhe Xu, Fangqing Zhang, Guanghua Chen, “Resonant tunneling in asymmetrical rectangular double-quantum-well/triple-barrier structure”, Phys. Stat. Sol. (b) 183, K37-K42 (1994).

6. Huaizhe Xu, Fangqing Zhang, Guanghua Chen, “General Expressions for Transmission Coefficient and Resonance Condition of a One-Dimensional Symmetrical Triple-Barrier Structure”, Phys. Stat. Sol. (b) 182, K73-K77 (1994).

5. Huaizhe Xu, Gong Yu, Fangqing Zhang, Guanghua Chen, “Transmission Coefficient in Symmetrical Double-Well Potential Structures”, Phys. Stat. Sol. (b) 179, K57-K60 (1993).

4. G. Chen, Huaizhe XU et al., Dependence of structural properties of c-Ge:H on deposition temperature, Int’l PVSEC-7, Japan, 193 (1993).

3. Huaizhe Xu, Yinyue Wang, Guanghua Chen, “Shape of the Transmission Spectrum in Rectang-ular Double-Barrier Structures”, Phys. Stat. Sol. (b) 171, K9-K12 (1992).

2. Huaizhe Xu, “Well Width Determination in a One-Dimensional Symmetrical Rectangular ABCBA-Type Double-Barrier Structure”, Phys. Stat. Sol. (b) 170, K33-K35 (1992).

1. Huaizhe Xu, Yinyue Wang, Fangqing Zhang, Guanghua Chen, “Resonant Tunneling Condition in ABCBA-Type Rectangular Double-Barrier Structures”, Phys. Stat. Sol. (b) 163, K25-K27 (1991).