北京航空航天大學(xué)物理科學(xué)與核能工程學(xué)院凝聚態(tài)物理導(dǎo)師介紹：朱開貴

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導(dǎo)師詳細(xì)信息

姓名：朱開貴

性別：男

出生年份：1969

職稱：教授

院系：物理科學(xué)與核能工程學(xué)院

首次聘任導(dǎo)師時(shí)間：2009

現(xiàn)聘任導(dǎo)師一級(jí)學(xué)科名稱：物理學(xué)

現(xiàn)聘任導(dǎo)師二級(jí)學(xué)科名稱：凝聚態(tài)物理

聘任在第二學(xué)科培養(yǎng)博士生專業(yè)名稱：無

聘任在自主設(shè)置學(xué)科培養(yǎng)博士生專業(yè)名稱：無

主要研究方向及特色：1、功能薄膜材料的制備、性能及其應(yīng)用研究；2、納米材料和納米器件；3、聚變堆材料的輻照效應(yīng)；4、光伏材料及太陽能電池。

電子信箱：kgzhu@buaa.edu.cn

辦公電話：010-82316106

辦公地點(diǎn)：主樓528

通信地址：海淀區(qū)學(xué)院路37號(hào)北京航空航天大學(xué)物理系

個(gè)人簡介：

1998年8月于中國科學(xué)院固體物理研究所獲得博士學(xué)位；1998.9-2000-9，中國科學(xué)技術(shù)大學(xué)博士后；2000.9-2001.1，香港科技大學(xué)電子工程系訪問學(xué)者；2001.2-2006.6，先后在美國德州理工大學(xué)、美國內(nèi)布拉斯加大學(xué)林肯分校、美國弗吉尼亞聯(lián)邦大學(xué)從事科研工作；2006年7月北京航空航天大學(xué)直評(píng)教授。多年來從事薄膜和納米材料、低維半導(dǎo)體材料、半導(dǎo)體光電器件、等離子刻蝕以及ITER聚變反應(yīng)堆中第一壁材料等方面的研究，已在Applied Physics Letters、Solar Energy Materials and Solar Cells、Solar Energy、Journal of Applied Physics等各類核心期刊上發(fā)表論文60余篇，絕大多數(shù)為SCI所收錄。

Selected publications：

1. Aqing Chen, Kaigui Zhu, Huicai Zhong, Qingyi Shao, Guanglu Ge, A new investigation of oxygen flow influence on ITO thin films by magnetron sputtering, Solar Energy Materials & Solar Cells 120(2014)157-162

2. Fangfang Chen, Kaigui Zhu∗, Aqing Chen, Weijie Huang, Lishuang Feng, Zhen Zhou, Guanglu Ge, A Monte Carlo simulation model for surface evolution by plasma etching, Applied Surface Science 280 (2013) 655–659

3. Yu-tian Ma, Ying Zhang, Guang-Hong Lu, K. Zhu, “Effect of helium implantation on mechanical properties of niobium doped tungsten”, Science China-Physics, Mechanics and Astronomy 56 (2013)1396-1400

4. Yu-tian Ma, Ying Zhang, Guang-Hong Lu, K. Zhu, Zhenhua Zhao, Long Cheng, Bo Wang, Zhong Long, Changan Chen, G-.N. Luo, “The effect of cerium doping on helium implantation behavior in tungsten”, Nuclear Instruments and Methods in Physics Research B, 307 (2013) 55 – 59

5. Aqing Chen, Kaigui Zhu, Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency, Sol. Energy, 86 (2012) 393-397

6. Kaigui Zhu, Wu Wang, Qingyi Shao, Dongning Zhao, Yongfeng Lu, and Natale Ianno, Self-assembled ordered s of nanoscale germanium Esaki tunnel diodes, Applied Physics Letters, 98 (2011) 173110

7. ZHU KaiGui, CHENG JingRan, CHANG MingChao, Wang Wu, WEI WenBo, GE GuangLu, Growth of alumina oxide nanowires in an aluminum anodization process Chinese Science Bulletin, June 2011，Vol.56，No.18: 1947-1950

8. H. Yang, C. Wang, X. Diao, H. Wang, T. Wang, K. Zhu*, A new all-thin-film electrochromic device using LiBSO as the ion conducting layer,Journal of Physics D: Applied Physics, 41 (2008) 115301

9. H. Yang, C. Wang, K. Zhu, X. Diao, H. Wang, Y. Cui, T. Wang, An all-thin-film electrochrmic device composed of MoO3-LiBSO-NiOx multiplayer structure, Chinese Physics Letters, 25 (2008) 740-742

10. K. Zhu, D. Johnstone, J. Leach, Y. Fu, H. Morkoç, G. Li, B. Ganguly, High-power photoconductive switches of 4H-SiC with Si3N4 passivation and n+-GaN subcontact, Superlattices and Microstructures, Vol 41, 264-270, April 2007

11. Y. –T. Moon, J. Xie, C. Liu, Y. Fu, X. Ni, N. Biyikli, K. Zhu, F. Yun, A. Sagar, R. M. Feenstra, A study of the morphology of GaN seed on in situ deposited SixNy and its effect on properties of overgrowth of GaN epilayers, Journal of Crystal Growth, 291 (2006) 301 ~ 308

12. K. Zhu, G. Li, D. Johnstone, Y. Fu, J. Leach, B. Ganguly, C. W. Litton, H. Morkoç, High power photoconductive switch of 4H SiC with damage-free electrodes by using n+-GaN subcontact layer, Materials Science Forum Vols. 527-529 (2006), pp. 1387-1390

13. K. Zhu, S. Doğan, Y. T. Moon, J. Leach, F. Yun, D. Johnstone, H. Morkoç, G. Li, B. Ganguly. The effect of n+-GaN subcontact layer on 4H-SiC high-power photoconductive switch Applied Physics Letters, 86 (2005) 261108

14. K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, and H. Temkin, M. Holtz, Plasma etching of AlN/AlGaInN superlattices for device fabrication Applied Physics Letters, 81 (2002) 4688 ~ 4690

15. K. Zhu, V. Kuryatkov, B. Borisov, J. Yun, G. Kipshidze, S. A. Nikishin, H. Temkin, D. Aurongzeb, and M. Holtz, Evolution of Surface roughness of AlN and GaN induced by inductively coupled Cl2/Ar plasma etching. Journal of Applied Physics, 95 (2004) 4635-4641

16. V. Kuryatkov, K. Zhu, B. Borisov, A. Chandolu, I. Gherasoiu, G. Kipshidze, SNG. Chu, M. Hotlz, Y. Kudryavtsev, R. Asomoza, S. A. Nikishin, and H. Temkin, Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N Applied Physics Letters, 83 (2003) 1319 ~ 1321

17. V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. A. Nikishin, and H. Temkin, M. Holtz, Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N. Applied Physics Letters, 82 (2003) 1323 ~ 1325

18. K. Zhu, D. Johnstone, J. Leach, Y. Fu, H. Morkoç, G. Li, B. Ganguly High-power photoconductive switches of 4H-SiC with Si3N4 passivation and n+-GaN subcontact, Superlattices and Microstructures, Vol 41, 264-270, April 2007

19. G. Kipshidze, V. Kuryatkov, K. Zhu, B. Borisov, M. Holtz, S. A. Nikishin, and H. Temkin, AlN/AlGaInN superlattice light-emitting diodes at 280 nm, Journal of Applied Physics 93 (2003) 1363 ~ 1366